POL
发表于 2025-3-21 16:08:57
书目名称Gallium Nitride Electronics影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0380403<br><br> <br><br>书目名称Gallium Nitride Electronics影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0380403<br><br> <br><br>书目名称Gallium Nitride Electronics网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0380403<br><br> <br><br>书目名称Gallium Nitride Electronics网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0380403<br><br> <br><br>书目名称Gallium Nitride Electronics被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0380403<br><br> <br><br>书目名称Gallium Nitride Electronics被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0380403<br><br> <br><br>书目名称Gallium Nitride Electronics年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0380403<br><br> <br><br>书目名称Gallium Nitride Electronics年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0380403<br><br> <br><br>书目名称Gallium Nitride Electronics读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0380403<br><br> <br><br>书目名称Gallium Nitride Electronics读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0380403<br><br> <br><br>
Foreshadow
发表于 2025-3-21 21:25:05
0933-033X materials to packaging.Interdisciplinary approach.Includes s.Gallium Nitride Electronics. covers developments in III-N semiconductor-based electronics with a focus on high-power and high-speed RF applications. Material properties of III-N semiconductors and substrates; the state-of-the-art of device
yohimbine
发表于 2025-3-22 00:43:56
https://doi.org/10.1007/978-3-642-28909-5n (MOCVD) is analyzed systematically. Nitride-specific material characterization, doping, and material quality issues are analyzed. Substrate properties are reviewed systematically with respect to electronic requirements.
Locale
发表于 2025-3-22 07:48:04
Annette Bruce Dr.,Christoph Jerominchottky and ohmic contacts, and lithography of optically transparent materials are discussed. State-of-the art recess processes and passivation technologies are analyzed. Bipolar device technology issues are reviewed.
concentrate
发表于 2025-3-22 10:27:26
http://reply.papertrans.cn/39/3805/380403/380403_5.png
Somber
发表于 2025-3-22 15:39:12
Book 2008 graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; and to all scientists with a general interest in advanced electronics..
Somber
发表于 2025-3-22 17:46:59
http://reply.papertrans.cn/39/3805/380403/380403_7.png
基因组
发表于 2025-3-22 22:00:13
Device Processing Technology,chottky and ohmic contacts, and lithography of optically transparent materials are discussed. State-of-the art recess processes and passivation technologies are analyzed. Bipolar device technology issues are reviewed.
肥料
发表于 2025-3-23 03:21:51
Device Characterization and Modeling, involving pulsed-characterization and other advanced techniques are discussed. Large-signal characterization and modeling are discussed for nitride devices, including the modeling of contacts, diodes, dispersion, and thermal aspects.
烦躁的女人
发表于 2025-3-23 05:40:36
A Practical Case for Using Agile Methods,t between 0.5 and 100 GHz. Low-noise amplifiers are presented and analyzed for high-dynamic range, robustness, and high linearity. The last section of the chapter treats other circuits functions such as mixers and oscillators. Again, nitride-specific advantages and challenges are investigated.