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发表于 2025-3-21 18:04:51
书目名称GaP Heteroepitaxy on Si(100)影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0380204<br><br> <br><br>书目名称GaP Heteroepitaxy on Si(100)影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0380204<br><br> <br><br>书目名称GaP Heteroepitaxy on Si(100)网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0380204<br><br> <br><br>书目名称GaP Heteroepitaxy on Si(100)网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0380204<br><br> <br><br>书目名称GaP Heteroepitaxy on Si(100)被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0380204<br><br> <br><br>书目名称GaP Heteroepitaxy on Si(100)被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0380204<br><br> <br><br>书目名称GaP Heteroepitaxy on Si(100)年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0380204<br><br> <br><br>书目名称GaP Heteroepitaxy on Si(100)年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0380204<br><br> <br><br>书目名称GaP Heteroepitaxy on Si(100)读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0380204<br><br> <br><br>书目名称GaP Heteroepitaxy on Si(100)读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0380204<br><br> <br><br>
Flounder
发表于 2025-3-21 21:32:43
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Enteropathic
发表于 2025-3-22 01:09:13
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安抚
发表于 2025-3-22 04:46:54
https://doi.org/10.1007/978-1-349-11821-2s such as industrial scalability, reliable process control and established preparation of phosphorus containing III–V compounds, MOVPE has become the dominant process for the manufacture of laser diodes, multi-junction solar cells, and LEDs.
艺术
发表于 2025-3-22 10:11:46
Experimental,s such as industrial scalability, reliable process control and established preparation of phosphorus containing III–V compounds, MOVPE has become the dominant process for the manufacture of laser diodes, multi-junction solar cells, and LEDs.
ETCH
发表于 2025-3-22 13:24:05
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ETCH
发表于 2025-3-22 17:26:52
The First Five Psychotherapy Sessionsinterface necessitating a suitable substrate preparation prior to heteroepitaxy. New defect mechanisms—typically not observed in III–V homoepitaxy—arise from the interface with the Si(100) substrate and need to be controlled to achieve defect concentrations suitable for applications in advanced optoelectronic devices.
Suggestions
发表于 2025-3-22 22:54:31
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连词
发表于 2025-3-23 04:20:38
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粗糙滥制
发表于 2025-3-23 07:14:47
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