AGGER
发表于 2025-3-25 07:20:40
GaAs Digital Integrated Circuits, based on self-aligned GaAs MESFETs at 300 K and of 11.6 ps at 300 K and 5.8 ps at 77 K for logic based on modulation doped AlGaAs-GaAs transistors (also called HEMTs) have been achieved, making GaAs circuits the fastest solid state circuits. Circuits as complicated as 16 x 16
Countermand
发表于 2025-3-25 11:23:27
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贝雷帽
发表于 2025-3-25 15:23:29
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Immunoglobulin
发表于 2025-3-25 19:01:47
A Self-Help Guide to Managing DepressionAccording to the Bloch theorem a one-electron wave function in a crystal is of the form . where ... is a function with the same spatial periodicity as the crystal lattice. The wave functions .. are found from the solution of the Schrödinger equation: . where . is the crystal potential, . is the wave vector, and . is the electron energy.
FAWN
发表于 2025-3-25 19:59:38
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Digest
发表于 2025-3-26 03:00:56
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cravat
发表于 2025-3-26 04:32:09
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abstemious
发表于 2025-3-26 12:11:28
Band Structure and Transport Properties,According to the Bloch theorem a one-electron wave function in a crystal is of the form . where ... is a function with the same spatial periodicity as the crystal lattice. The wave functions .. are found from the solution of the Schrödinger equation: . where . is the crystal potential, . is the wave vector, and . is the electron energy.
BILK
发表于 2025-3-26 14:37:22
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DOLT
发表于 2025-3-26 18:19:13
Novel GaAs Devices,As the dimensions of GaAs devices shrink, the effective electron velocity should increase, leading to a shorter transit time and to a ballistic or near-ballistic mode of operation (see Chapter 2). At the same time the power consumption drops as a consequence of smaller device dimensions.