头脑冷静
发表于 2025-3-23 09:45:20
https://doi.org/10.1007/978-981-15-1369-5 nucleates near the cathode, propagates toward the anode with velocity of the order of 10.m/s, and disappears near the anode (see Fig. 4–1–2). Then this process repeats itself. The domain formation leads to a current drop, the domain annihilation results in an increase in the current, and periodic current oscillations exist in the circuit.
ANTH
发表于 2025-3-23 17:05:00
Ridley-Watkins-Hilsum-Gunn Effect, nucleates near the cathode, propagates toward the anode with velocity of the order of 10.m/s, and disappears near the anode (see Fig. 4–1–2). Then this process repeats itself. The domain formation leads to a current drop, the domain annihilation results in an increase in the current, and periodic current oscillations exist in the circuit.
floodgate
发表于 2025-3-23 21:22:52
Book 1987 a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in wri
Matrimony
发表于 2025-3-24 00:25:03
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FLOUR
发表于 2025-3-24 02:41:22
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Obedient
发表于 2025-3-24 07:58:11
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MERIT
发表于 2025-3-24 12:00:43
GaAs Technology,Standard purification processes make it possible to obtain Ga as pure as 99.99999%. Liquid Ga reacts with quartz at high temperatures leading to impurities in GaAs grown in quartz containers. Ga is considered to be toxic.
expire
发表于 2025-3-24 15:55:37
Ridley-Watkins-Hilsum-Gunn Effect,s the bias voltage, . is the sample length) was greater than some critical value . . (~3kV/cm for GaAs and ~6kVJcm for InP), spontaneous current oscillations appeared in the circuit (see Fig. 4–1–1). Later Gunn published the results of the detailed experimental study of this effect . Using pr
使满足
发表于 2025-3-24 23:03:03
GaAs FETs: Device Physics and Modeling,cillators, mixers, switches, attenuators, modulators, and limiters are widely used and highspeed integrated circuits based on GaAs FETs have been developed. The basic advantages of these devices include a higher electron velocity, leading to smaller transit time and faster response, and sxemi-insula
广口瓶
发表于 2025-3-25 03:06:26
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