偏差
发表于 2025-3-21 20:08:31
书目名称Extended Defects in Germanium影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0319808<br><br> <br><br>书目名称Extended Defects in Germanium影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0319808<br><br> <br><br>书目名称Extended Defects in Germanium网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0319808<br><br> <br><br>书目名称Extended Defects in Germanium网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0319808<br><br> <br><br>书目名称Extended Defects in Germanium被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0319808<br><br> <br><br>书目名称Extended Defects in Germanium被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0319808<br><br> <br><br>书目名称Extended Defects in Germanium年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0319808<br><br> <br><br>书目名称Extended Defects in Germanium年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0319808<br><br> <br><br>书目名称Extended Defects in Germanium读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0319808<br><br> <br><br>书目名称Extended Defects in Germanium读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0319808<br><br> <br><br>
strdulate
发表于 2025-3-21 23:46:03
Sheung Ng,Kotaro Yoshida,Judith T. Zelikoff in covalent semiconductors . The difference with a point-defect related deep level is that the energy position of the dislocation acceptor level shifts with its occupation due to the Coulomb repulsion between the electrons on the DB sites. At the same time the line charge induces a surrounding
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发表于 2025-3-22 02:29:49
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BRIEF
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懒洋洋
发表于 2025-3-22 10:43:29
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柏树
发表于 2025-3-22 16:14:54
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柏树
发表于 2025-3-22 19:54:53
Germanium-Based Substrate Defects,ted in different ways, and the best known is by epitaxial deposition. Recently, some other methods have been developed, like the Ge condensation technique or direct wafer bonding, resulting in a Ge (or Ge-rich) layer on an insulator substrate. Because of the high lattice mismatch between Ge and Si,
palpitate
发表于 2025-3-22 23:07:44
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群居动物
发表于 2025-3-23 04:36:02
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exceptional
发表于 2025-3-23 08:33:18
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