Euthyroid
发表于 2025-3-23 12:29:34
Features of Formation of Electron Band Structure and Physical Properties of Ferromagnetic Semiconduc the modern electron density functional theory is given. All known unique physical parameters of it monoxide including as the phase of variable composition are presented. What determines the nature of the electronic insulator-metal transition in EuO.-phase at T < T..
EXTOL
发表于 2025-3-23 14:28:25
978-3-030-09571-0Springer International Publishing AG, part of Springer Nature 2018
障碍物
发表于 2025-3-23 19:34:32
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美丽的写
发表于 2025-3-24 00:39:50
V. Arakelian,J. Xu,J. P. Le BaronThe methods of synthesis of europium monoxide in the form of powders, single crystals, thin films are described. Its phase diagram is shown as a phase of variable composition, as well as its thermodynamic parameters.
abnegate
发表于 2025-3-24 05:27:57
Michel Guillot,Vladimir Canudas-RomoThe physical principles of increasing the Curie temperature of a magnetic semiconductor and their realization in Eu.R.O solid solutions are discussed (R - Sm, Gd). The possible role of magnetic impurity states in the manifestation of the magnetic heterogeneity effect in them is traced.
Customary
发表于 2025-3-24 10:05:08
Tensions in the Linguistic SpaceTheoretical prerequisites for creating devices of cryogenic spin electronics at the implementation of the Jozephson effect in a superconducting tunnel transition with a ferromagnetic barrier are presented.
Atmosphere
发表于 2025-3-24 13:11:27
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ANA
发表于 2025-3-24 18:23:09
https://doi.org/10.1007/978-1-4020-5839-4The results of creation, investigation and application of the metal/ferromagnetic semiconductor (EuO) heterostructures and ferromagnetic semiconductor (EuO)/semiconductor as a basis of submillimeter spin electronics are presented.
整理
发表于 2025-3-24 21:36:00
https://doi.org/10.1007/978-3-031-11236-2Results of the creation of a high-temperature spin injector and a spin-wave transistor based on EuO are presented. The structure and properties of the EuO:Fe composite providing the ability of its thin films to be promising for creating of semiconductor spin electronic devices that are capable operated at the room temperatires, are given.
expository
发表于 2025-3-25 03:02:38
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