粗鄙的人
发表于 2025-4-1 05:29:09
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daredevil
发表于 2025-4-1 07:47:02
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寻找
发表于 2025-4-1 10:46:45
Preferential Sputtering of Tantalum Oxide: Reemission of Helium and Transient Effects in the Altereupports the assumption that the altered layer corresponds to the range profile of the bombarding ions. Changes of the angle of i nci dence result in characteri stic transient surface concentration changes which can be explained by applying existing models for the development of the altered layer.
善变
发表于 2025-4-1 16:40:21
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配置
发表于 2025-4-1 22:24:01
0168-132X face features which develop during sputtering erosion of solids. Such experimental, theoretical and computational studies have also been carried out in many international laboratories and, as well as much cow~onality and agreement, substantial disagreements were unresolved. In view of the increasing
连词
发表于 2025-4-1 22:38:25
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过滤
发表于 2025-4-2 05:42:55
https://doi.org/10.1007/978-3-8349-3718-6ors. A list of these collaborators and the many institutes involved is given in the Acknowledgements section. However, I would like to preface this contribution by stating, clearly and unequivocally, that without the enthusiasm of, and contributions from, my collaborators, the study would have been far less effective and rewarding.
仲裁者
发表于 2025-4-2 07:45:46
https://doi.org/10.1007/978-981-16-5268-4orr) experiments are outlined using the dark space DC bias voltage to characterize the etch. Surface analysis of etched GaAs and InP using AES, photoluminescence and EDX is used to establish the role of impurities related to changes in surface morphology and chemical changes due to RIE.