TAIN
发表于 2025-3-23 18:02:37
Bubbles, Blisters, and Exfoliation, (see e.g. Carter et al. /1 /, G. Carter and J. Whitton, this conference). A second mechanism is due to the implantation of unsoluble gas ions, especially He, but also Ne, Ar, Kr, Xe, H, and N into the subsurface layers of a solid. It is the phenomena observed during gas ion implantation that this p
表示问
发表于 2025-3-23 22:51:00
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curriculum
发表于 2025-3-24 02:44:17
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Radiculopathy
发表于 2025-3-24 08:02:13
Reactive Ion Etching of GaAs and Related III-V Compounds,le of ion bombardment and chemical reaction in dry etching of these compound semiconductors. Both high pressure (≥0.1 Torr) and low pressure (1–100 mTorr) experiments are outlined using the dark space DC bias voltage to characterize the etch. Surface analysis of etched GaAs and InP using AES, photol
CHURL
发表于 2025-3-24 11:31:59
Ion Beam Enhanced Deposition and Dynamic Ion Mixing for Surface Modification, whose characteristics are interesting for the improvement of surface properties (wear-, corrosion-, thermal oxidation resistance) (1). One of the limiting factors for such treatments is the shallow thickness of the modified layer.
hazard
发表于 2025-3-24 17:45:27
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草率女
发表于 2025-3-24 20:25:48
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Annotate
发表于 2025-3-25 00:22:03
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Obituary
发表于 2025-3-25 04:07:12
NATO Science Series E:http://image.papertrans.cn/e/image/314901.jpg
慢跑
发表于 2025-3-25 10:56:58
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