民俗学 发表于 2025-3-21 18:29:43
书目名称Epitaxy影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0313364<br><br> <br><br>书目名称Epitaxy影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0313364<br><br> <br><br>书目名称Epitaxy网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0313364<br><br> <br><br>书目名称Epitaxy网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0313364<br><br> <br><br>书目名称Epitaxy被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0313364<br><br> <br><br>书目名称Epitaxy被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0313364<br><br> <br><br>书目名称Epitaxy年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0313364<br><br> <br><br>书目名称Epitaxy年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0313364<br><br> <br><br>书目名称Epitaxy读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0313364<br><br> <br><br>书目名称Epitaxy读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0313364<br><br> <br><br>过多 发表于 2025-3-21 20:49:23
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Prevention and Treatment of Infectionssm of two lattice planes that have networks of identical or quasi-identical form and of closely similar spacings”. Experimental data gained later indicated that epitaxy occurs if the lattice misfit, defined as 100 (a.—a.)/a., where a. and a. are the corresponding network spacings (lattice constants)Leaven 发表于 2025-3-22 14:14:27
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Introduction orientation relationship, as revealed by their external forms . These observations led to attempts to reproduce the effect artificially, during crystal growth from solution, and the first recorded successful attempt was reported in 1836 by Frankenheim , when the now well-known case of parTrigger-Point 发表于 2025-3-23 01:50:51
Homo- and Heteroepitaxial Crystallization Phenomena., small embryonic clusters of atoms or molecules, agglomerate to form “islands”. As growth proceeds, agglomeration increases, chains of islands are later formed and join up to produce a continuous deposit which, however, still contains channels and holes. These holes eventually fill to give a contisclera 发表于 2025-3-23 09:36:23
Application Areas of Epitaxially Grown Layer Structuresuding mixed systems like, e.g., metal—semiconductor or semiconductor-on-insulator device structures. The epitaxially grown structures may be of very high perfection, satisfying the so-called device-quality demands. They are suitable for application in many branches of the “high technology” part of e