Servile 发表于 2025-3-25 05:30:40

Operationen in der Sella-Chiasma-Region,perties. The one-dimensional materials include nanowires and carbon nanotubes (CNTs), and the two-dimensional materials include graphene and other two-dimensional materials, such as MoS.. These materials were also investigated for RRAMs.

兽皮 发表于 2025-3-25 10:49:21

http://reply.papertrans.cn/31/3084/308370/308370_22.png

纯朴 发表于 2025-3-25 11:56:48

http://reply.papertrans.cn/31/3084/308370/308370_23.png

并排上下 发表于 2025-3-25 16:31:29

http://reply.papertrans.cn/31/3084/308370/308370_24.png

Agility 发表于 2025-3-25 20:26:25

Jianyong OuyangDetails how charge trapping can occur on nanoparticles and at interface between bulk metal and metal nanoparticles.Explains how charge transfer can lead to resistive switches.Demonstrates how conducti

regale 发表于 2025-3-26 03:30:27

http://reply.papertrans.cn/31/3084/308370/308370_26.png

JEER 发表于 2025-3-26 06:59:00

Introduction,density and high speed. Today, the popular memory devices in market are silicon-based devices. There are three leading memories: flash memories, dynamic random access memories (DRAMs), and hard-disk drives (HDDs) . But all of them have obstacles that are difficult to overcome. Silicon-based fl

爆炸 发表于 2025-3-26 09:48:45

http://reply.papertrans.cn/31/3084/308370/308370_28.png

Melatonin 发表于 2025-3-26 16:07:36

http://reply.papertrans.cn/31/3084/308370/308370_29.png

WAG 发表于 2025-3-26 17:08:39

RRAMs with Organic Donor and Acceptor,ified into donor and acceptor. Oxidation or reduction can take place through chemical or electrochemical reaction. After oxidation or reduction, the conductivity of the conjugated organic molecules or polymers is dramatically increased, because the oxidation or reduction can induce charges on the hi
页: 1 2 [3] 4
查看完整版本: Titlebook: Emerging Resistive Switching Memories; Jianyong Ouyang Book 2016 The Author(s) 2016 Bistable devices.Charge trapping.Fabrication of novel