Opiate
发表于 2025-3-21 16:10:40
书目名称Emerging Non-volatile Memory Technologies影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0308325<br><br> <br><br>书目名称Emerging Non-volatile Memory Technologies影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0308325<br><br> <br><br>书目名称Emerging Non-volatile Memory Technologies网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0308325<br><br> <br><br>书目名称Emerging Non-volatile Memory Technologies网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0308325<br><br> <br><br>书目名称Emerging Non-volatile Memory Technologies被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0308325<br><br> <br><br>书目名称Emerging Non-volatile Memory Technologies被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0308325<br><br> <br><br>书目名称Emerging Non-volatile Memory Technologies年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0308325<br><br> <br><br>书目名称Emerging Non-volatile Memory Technologies年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0308325<br><br> <br><br>书目名称Emerging Non-volatile Memory Technologies读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0308325<br><br> <br><br>书目名称Emerging Non-volatile Memory Technologies读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0308325<br><br> <br><br>
SIT
发表于 2025-3-21 22:41:30
Spin Transfer Torque Magnetoresistive Random Access Memory technologies have been proposed to cater to the performance gaps within the memory hierarchy system. The magnetoresistive random access memory (MRAM), an emerging and promising NVM technology, will be the key focus of this chapter. At the core of MRAM is the magnetic tunnel junction (MTJ), a storag
LURE
发表于 2025-3-22 01:22:48
Current-Driven Domain Wall Dynamics in Magnetic Heterostructures for Memory Applicationses. In 2008, IBM scientists have developed a new concept of memory, which is based on driving of magnetic domain walls (DWs) along a nanowire using an electric current. In this chapter, we first discuss the efficient current-induced nucleation of DWs. We then review the mechanism of various driving
SEMI
发表于 2025-3-22 07:57:19
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moratorium
发表于 2025-3-22 10:58:44
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Outmoded
发表于 2025-3-22 13:52:38
Circuit Design for Non-volatile Magnetic Memorybecause of its performance and non-volatility. However, it has various design challenges such as small tunneling magnetoresistance (TMR) ratios and large variability that need to be tackled for reliable operation. This chapter will discuss those challenges and introduce state-of-the-art write and re
Outmoded
发表于 2025-3-22 18:57:50
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Banquet
发表于 2025-3-22 23:28:56
3D Nanomagnetic Logic it comes to massively parallel and pipelined digital operations with stringent power constraints, 3D Nanomagnetic Logic might pay off. This chapter gives an insight on an experimentally demonstrated complete set of logic devices, where the entities are not electrically connected but fully powered a
摇晃
发表于 2025-3-23 02:25:26
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散步
发表于 2025-3-23 08:57:36
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