正式演说
发表于 2025-3-23 10:12:58
RRAM Device Characterizations and Modellingbeen carried out to facilitate practical use of RRAM as data storage system. However, further improvements, such as reducing the operation voltage and current, suppressing the device variability, etc., are still needed for the commercialization of RRAM. To further optimize the device performance, ph
Gossamer
发表于 2025-3-23 16:43:18
RRAM-Based Neuromorphic Computing Systemsdata generated across the globe as well as various emerging hardware requirements to execute complex tasks, e.g., pattern recognition, speech classification, etc. Neuromorphic computing has emerged as one of the most extensively investigated among these approaches. RRAM devices with their desired ch
Arable
发表于 2025-3-23 18:05:11
An Automatic Sound Classification Framework with Non-volatile Memoryautomatic sound classification (ASC) systems has improved significantly in recent years. However, the high computational cost, hence high power consumption, remains a major hurdle for large-scale implementation of ASC systems on mobile and wearable devices. Motivated by the observations that humans
Judicious
发表于 2025-3-24 01:02:21
Wen Siang Lew,Gerard Joseph Lim,Putu Andhita DananOffers a comprehensive guide to non-volatile magnetic memory devices.Written by prominent experts from both academia and industry.Highlights state-of-the-art applications of memory technologies
壮观的游行
发表于 2025-3-24 02:41:12
http://image.papertrans.cn/e/image/308325.jpg
SCORE
发表于 2025-3-24 08:18:47
https://doi.org/10.1007/978-3-030-46855-2rowave generator, and also as a microwave detector, by using the concept of spin-transfer torque. When the MTJ nanopillar is used as a microwave generator, the device is known as a spin-torque nano-oscillator (STNO) and offers advantages of high output power over metallic-based STNOs. We first discu
不遵守
发表于 2025-3-24 11:19:14
http://reply.papertrans.cn/31/3084/308325/308325_17.png
多产鱼
发表于 2025-3-24 17:38:58
http://reply.papertrans.cn/31/3084/308325/308325_18.png
易碎
发表于 2025-3-24 20:44:22
https://doi.org/10.1007/978-3-031-58791-7eration memory device. This approach has many technological appeals as it can enable ultra-low-latency data transfer and ultra-low power electronics. The underlying mechanisms governing magnetization switching from an applied electric-field are interfacial spin-charge coupling and Larmor precession.
天然热喷泉
发表于 2025-3-25 01:12:07
http://reply.papertrans.cn/31/3084/308325/308325_20.png