万能
发表于 2025-3-21 16:10:59
书目名称Electronic Properties of Semiconductor Interfaces影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0306390<br><br> <br><br>书目名称Electronic Properties of Semiconductor Interfaces影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0306390<br><br> <br><br>书目名称Electronic Properties of Semiconductor Interfaces网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0306390<br><br> <br><br>书目名称Electronic Properties of Semiconductor Interfaces网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0306390<br><br> <br><br>书目名称Electronic Properties of Semiconductor Interfaces被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0306390<br><br> <br><br>书目名称Electronic Properties of Semiconductor Interfaces被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0306390<br><br> <br><br>书目名称Electronic Properties of Semiconductor Interfaces年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0306390<br><br> <br><br>书目名称Electronic Properties of Semiconductor Interfaces年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0306390<br><br> <br><br>书目名称Electronic Properties of Semiconductor Interfaces读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0306390<br><br> <br><br>书目名称Electronic Properties of Semiconductor Interfaces读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0306390<br><br> <br><br>
entreat
发表于 2025-3-21 21:22:47
Book 2004ing’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively. .
gorgeous
发表于 2025-3-22 00:35:22
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入会
发表于 2025-3-22 07:24:20
The IFIGS-and-Electronegativity Concept: Experiment and Theory,orce lowering .. Only the homogeneous barrier heights .are a reliable basis for a comparison with theoretically values Local variations of the barrier heights of real Schottky contacts on the nm-scale were directly detected by scanning ballistic-electron emission spectroscopy. The respective local B
萤火虫
发表于 2025-3-22 11:32:39
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enfeeble
发表于 2025-3-22 15:10:56
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enfeeble
发表于 2025-3-22 17:40:41
Informatorium voor Voeding en Diëtetiekorce lowering .. Only the homogeneous barrier heights .are a reliable basis for a comparison with theoretically values Local variations of the barrier heights of real Schottky contacts on the nm-scale were directly detected by scanning ballistic-electron emission spectroscopy. The respective local B
separate
发表于 2025-3-22 21:54:45
Voeding bij galblaas- en leveraandoeningen, . , . et al. and . et al. calculated the quasi-particle shifts of the valence-band maxima of the III–V and the II–VI compound semiconductors in the GW approximation. The quasi-particle corrections move the valence band-maxima to lower energies and, on the average, the GW c
冥界三河
发表于 2025-3-23 05:26:09
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Chronic
发表于 2025-3-23 08:15:46
W.K. Visser,S. Runia,J. Tiebie,Y.F. Heerkenshe current density is then given by..where , .. and .. are the electron mobility and diffusion constant, respectively. The electric-field strength .(.) in the barrier region may be written as ...(.) = d/dz, where the conduction-band bottom ..(.) is referenced to the energy position .. of the Fermi level in the metal bulk.