突然 发表于 2025-3-21 18:59:18
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https://doi.org/10.1007/978-3-663-01367-9I shall illustrate this by picking three specific examples: broadening of the gap level associated with the defect, fractal character of the defect wave-function, and metastability of some defect centers.窗帘等 发表于 2025-3-22 00:57:09
http://reply.papertrans.cn/31/3062/306200/306200_3.png鸽子 发表于 2025-3-22 08:35:45
Erratum to: Quantitatives Denken also reported estimation of the field of forces on nearest metallic neighbours to the hydrogen atom. The associated field of displacement is more difficult to obtain because it relies on the unknown force constants of the alloys. The determination of these force contants remains an objective for the future.miracle 发表于 2025-3-22 12:47:50
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http://reply.papertrans.cn/31/3062/306200/306200_8.pngDorsal 发表于 2025-3-23 04:53:14
Deep defects in semiconductor alloys : Theoretical aspects,I shall illustrate this by picking three specific examples: broadening of the gap level associated with the defect, fractal character of the defect wave-function, and metastability of some defect centers.Tortuous 发表于 2025-3-23 06:21:21
https://doi.org/10.1057/978-1-137-57346-9 as well as large gap ionic compounds showed that the effects of local fields and dynamical screening are crucial for accurate results. With no empirical input, the calculated band gaps, optical transitions, and band dispersions are all within a few percent of experimental values.