疲劳
发表于 2025-3-25 05:17:23
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Tartar
发表于 2025-3-25 10:57:09
https://doi.org/10.1007/978-3-663-05911-0 applications in this context in Section 8.2 and also present a very brief review of the experimental investigations in Section 8.3. The section 8.4 contains the single experimental open research problem.
充气球
发表于 2025-3-25 12:06:16
Book 2013ical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense elec
DUCE
发表于 2025-3-25 16:31:01
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搜寻
发表于 2025-3-25 20:15:15
Die Kernaussagen auf einen Blick, mass which enters in various transport coefficients and plays the most dominant role in explaining the experimental results of different scattering mechanisms through Boltzmann’s transport equation . The carrier degeneracy in semiconductors influences the effective mass when it is energy dependent.
affinity
发表于 2025-3-26 00:33:45
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现晕光
发表于 2025-3-26 06:37:48
Effective Electron Mass in Low-Dimensional Semiconductors978-3-642-31248-9Series ISSN 0933-033X Series E-ISSN 2196-2812
jet-lag
发表于 2025-3-26 11:53:48
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JOG
发表于 2025-3-26 12:56:36
https://doi.org/10.1007/978-3-658-07047-2wo infinitely deep one-dimensional (1D) rectangular potential wells, along any two orthogonal directions leading to quantization of the wave vectors along the said directions, allowing 1D carrier transport.
散布
发表于 2025-3-26 17:51:52
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