Institution 发表于 2025-3-23 12:52:16

Reactor Technology,-called barrel reactors have external electrodes, and are suitable for non-directional etching only. Recent additions to the family of dry etchers use magnetic fields to improve system performance, or have special electrode designs.

Ringworm 发表于 2025-3-23 15:44:28

Book 1991 insight in the meaning and magnitude of the many parameters relevant to dry etching. Electrical engineering concepts are emphasized to explain the pros and cons of reactor concepts and excitation frequency ranges. In the description of practical applications, extensive use is made of cross-referenc

Locale 发表于 2025-3-23 20:14:16

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正面 发表于 2025-3-24 00:41:16

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floaters 发表于 2025-3-24 03:07:48

https://doi.org/10.1007/978-3-030-36766-4-called barrel reactors have external electrodes, and are suitable for non-directional etching only. Recent additions to the family of dry etchers use magnetic fields to improve system performance, or have special electrode designs.

lethal 发表于 2025-3-24 09:44:19

Introduction,atterns were transferred mostly by means of hard contact exposure of a photoresist. After developing the resist pattern, the wafers were immersed in some aggressive liquid to remove the material not covered by resist. Since wet chemical etching is in principle isotropic, the pattern etched is wider

偏见 发表于 2025-3-24 14:02:37

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hankering 发表于 2025-3-24 18:45:07

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步兵 发表于 2025-3-24 21:38:02

Gas and Surface Processes,d, ground-state, excited and fragmented particles. These species are generated mostly by collision processes between electrons and the neutral gas. Electrons have a dominant role, as they are by far the “hottest” particles in a cold plasma.

充满装饰 发表于 2025-3-25 00:21:13

Reactor Technology,urroundings. The hardware to produce such discharges will be dealt with in this chapter. A large variety of reactors is in use. The frequency of operation of dry etch systems which are or have been available commercially ranges from 50 kHz in the LF band to 50 GHz in the MW band, but HF, more specif
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查看完整版本: Titlebook: Dry Etching for VLSI; A. J. Roosmalen,J. A. G. Baggerman,S. J. H. Brader Book 1991 Springer Science+Business Media New York 1991 Plasma.VL