LAP
发表于 2025-3-27 00:21:37
MOS transistor models for distortion analysis,rs of older technologies. Some of these effects have given rise to additional technological steps in the processing of a MOS transistor, such as the use of lightly-doped drains. As a result, a modern deep submicron transistor is a more complicated structure than a transistor of older technologies.
言外之意
发表于 2025-3-27 03:46:15
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车床
发表于 2025-3-27 07:54:18
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Nebulous
发表于 2025-3-27 09:58:24
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Mets552
发表于 2025-3-27 15:55:08
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欢腾
发表于 2025-3-27 19:07:06
MOS transistor models for distortion analysis,ies with effective gate lengths of 0.35. are in use in 1997. In these small devices several physical effects play a much larger role than in transistors of older technologies. Some of these effects have given rise to additional technological steps in the processing of a MOS transistor, such as the u
tattle
发表于 2025-3-27 23:05:07
Weakly nonlinear behavior of basic analog building blocks,sist of analog building blocks, has been studied already for some particular classes of circuits, such as time-continuous filters . A treatment of these circuits would require a thorough study of those classes of circuits, which is beyond the scope of this book. Instead,
garrulous
发表于 2025-3-28 05:32:45
Measurements of basic nonlinearities of transistors,apter concentrates on how higher-order derivatives of the transistor current can be measured accurately. The measurement results could be used in device parameter extraction. Only measurements on a bipolar transistor are presented in this chapter. The principles can be applied to MOS transistors as
字形刻痕
发表于 2025-3-28 07:16:06
9楼
Abbreviate
发表于 2025-3-28 10:26:03
9楼