杀死
发表于 2025-3-23 12:38:45
https://doi.org/10.1007/978-3-540-34538-1ation data to microscopic techniques like transmission electron microscopy and, in particular, to in situ deformation tests in the electron microscope. Several methods have frequently been used and are described below in some detail. Others are only of supplementary character.
insurgent
发表于 2025-3-23 15:20:37
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gruelling
发表于 2025-3-23 22:01:13
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消散
发表于 2025-3-24 01:17:35
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finale
发表于 2025-3-24 02:27:08
https://doi.org/10.1007/978-3-662-24970-3ouble-kink or Peierls mechanism. This is connected with a strong temperature dependence of the dislocation mobility and the macroscopic flow stress. At low temperatures, the semiconductor crystals are brittle, like most of the other materials with a high Peierls stress. After the first review by Ale
AV-node
发表于 2025-3-24 09:52:37
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者变
发表于 2025-3-24 14:09:10
https://doi.org/10.1007/978-3-662-24970-3re low, the dislocation motion can be described by the theory of localized obstacles (Sect. 4.5). In the special case where the hardening mechanism inside the particles consists in the formation of antiphase boundaries, as in Al–Li, the matrix dislocations may move in pairs. Impenetrable obstacles l
barium-study
发表于 2025-3-24 14:55:00
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过分
发表于 2025-3-24 20:16:33
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PIZZA
发表于 2025-3-24 23:43:12
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