GNAT
发表于 2025-3-30 08:42:14
Vacancy-Mediated Interstitial-Substitutional Diffusion in Semiconducting and Metallic Matricesty of dislocations is usually unavoidable. This difficulty can be overcome by analyzing the diffusion behaviour in a narrow region below the surface as will be shown for the two-stage penetration profiles observed after Co diffusion in Nb.
Microgram
发表于 2025-3-30 15:25:57
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枫树
发表于 2025-3-30 18:06:52
https://doi.org/10.1007/978-3-030-11738-2ty of dislocations is usually unavoidable. This difficulty can be overcome by analyzing the diffusion behaviour in a narrow region below the surface as will be shown for the two-stage penetration profiles observed after Co diffusion in Nb.
切碎
发表于 2025-3-30 20:51:51
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出处
发表于 2025-3-31 01:52:13
Korporatismus und das deutsche Rentensystem, dynamical features of defects movement in crystalline solids are briefly reviewed. Recent developments including corrections to the classical rate theory for short-time memory effects in defect migration in solids are discussed.
单独
发表于 2025-3-31 08:10:52
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