Asphyxia
发表于 2025-3-21 18:14:39
书目名称Diffusion Processes in Advanced Technological Materials影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0279016<br><br> <br><br>书目名称Diffusion Processes in Advanced Technological Materials影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0279016<br><br> <br><br>书目名称Diffusion Processes in Advanced Technological Materials网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0279016<br><br> <br><br>书目名称Diffusion Processes in Advanced Technological Materials网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0279016<br><br> <br><br>书目名称Diffusion Processes in Advanced Technological Materials被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0279016<br><br> <br><br>书目名称Diffusion Processes in Advanced Technological Materials被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0279016<br><br> <br><br>书目名称Diffusion Processes in Advanced Technological Materials年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0279016<br><br> <br><br>书目名称Diffusion Processes in Advanced Technological Materials年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0279016<br><br> <br><br>书目名称Diffusion Processes in Advanced Technological Materials读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0279016<br><br> <br><br>书目名称Diffusion Processes in Advanced Technological Materials读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0279016<br><br> <br><br>
Trigger-Point
发表于 2025-3-21 22:09:11
Solid State Diffusion and Bulk Properties,relation factor .=lattice parameter .=jump frequency Δ.*=activation entropy Δ.*=activation enthalpy .=universal gas constant .=temperature, in degrees Kelvin Furthermore, the enthalpy and free energy (Δ.*)of activation for diffusion are given by:
带伤害
发表于 2025-3-22 03:37:10
http://reply.papertrans.cn/28/2791/279016/279016_3.png
百灵鸟
发表于 2025-3-22 08:13:45
Bulk and Grain Boundary Diffusion in Intermetallic Compounds, metals. The intermetallic compounds exist in a variety of lattice structures: from the simplest, such as .2 (NiAl, FeAl) and .1. (TiAl, CuAu), to very sophisticated configurations, such as quasicrystalline .-AlCuFe. The short- and long-range order are important phenomena of the intermetallic compou
figurine
发表于 2025-3-22 10:33:35
http://reply.papertrans.cn/28/2791/279016/279016_5.png
flaunt
发表于 2025-3-22 14:33:45
http://reply.papertrans.cn/28/2791/279016/279016_6.png
flaunt
发表于 2025-3-22 20:29:20
http://reply.papertrans.cn/28/2791/279016/279016_7.png
向前变椭圆
发表于 2025-3-23 01:08:48
Measurement of Stresses in Thin Films and Their Relaxation,ed, using only small amounts of materials. For example, the high density and fast performance of modern computers have been possible due to the incorporation of multilayer thin-film structures coupled with submicron photolithography on the back of the active devices formed in Si chips. Because thin-
geometrician
发表于 2025-3-23 02:26:54
Electromigration in Cu Thin Films,has increased each and every year since its initial commercialization in 1997 by DBM.[.] Chips with Cu wiring have improved conductivity, which has resulted in reduced RC time delays for wiring, where R is resistance and C is capacitance. When IC chip technology is extended below 0.2-μm dimension, t
groggy
发表于 2025-3-23 05:51:05
http://reply.papertrans.cn/28/2791/279016/279016_10.png