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发表于 2025-3-21 19:29:47
书目名称Differentiated Layout Styles for MOSFETs影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0278901<br><br> <br><br>书目名称Differentiated Layout Styles for MOSFETs影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0278901<br><br> <br><br>书目名称Differentiated Layout Styles for MOSFETs网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0278901<br><br> <br><br>书目名称Differentiated Layout Styles for MOSFETs网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0278901<br><br> <br><br>书目名称Differentiated Layout Styles for MOSFETs被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0278901<br><br> <br><br>书目名称Differentiated Layout Styles for MOSFETs被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0278901<br><br> <br><br>书目名称Differentiated Layout Styles for MOSFETs年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0278901<br><br> <br><br>书目名称Differentiated Layout Styles for MOSFETs年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0278901<br><br> <br><br>书目名称Differentiated Layout Styles for MOSFETs读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0278901<br><br> <br><br>书目名称Differentiated Layout Styles for MOSFETs读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0278901<br><br> <br><br>
anticipate
发表于 2025-3-21 21:26:09
978-3-031-29088-6The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerl
EWER
发表于 2025-3-22 03:31:41
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破译密码
发表于 2025-3-22 05:22:48
Małgorzata Przytulska,Juliusz L. KulikowskiIn this chapter, the effects of the high temperatures on the main electrical properties and characteristics of the semiconductors are presented.
放逐某人
发表于 2025-3-22 11:20:46
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枫树
发表于 2025-3-22 15:30:07
https://doi.org/10.1007/978-3-319-32229-2This chapter presents different unconventional layout styles for MOSFETs that can add new effects to their structures and boost their electrical performances and ionizing radiation tolerance. This layout technique does not add any extra cost to the current CMOS ICs manufacturing processes, it is only layout changing of the gate structure.
枫树
发表于 2025-3-22 17:37:26
Joe Lorkowski,Vladik KreinovichThis chapter discusses the most important concepts about the ionizing radiation (harsh environment) effects in the electrical parameters and figures of merit of MOSFETs.
endocardium
发表于 2025-3-22 23:11:32
Introduction,This chapter contexts the importance of the differentiated layout styles for the Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) to boost their electrical performance and ionizing radiation tolerance.
installment
发表于 2025-3-23 05:27:42
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象形文字
发表于 2025-3-23 05:52:12
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