Awkward 发表于 2025-3-21 17:53:44

书目名称Deterministic Solvers for the Boltzmann Transport Equation影响因子(影响力)<br>        http://impactfactor.cn/if/?ISSN=BK0269345<br><br>        <br><br>书目名称Deterministic Solvers for the Boltzmann Transport Equation影响因子(影响力)学科排名<br>        http://impactfactor.cn/ifr/?ISSN=BK0269345<br><br>        <br><br>书目名称Deterministic Solvers for the Boltzmann Transport Equation网络公开度<br>        http://impactfactor.cn/at/?ISSN=BK0269345<br><br>        <br><br>书目名称Deterministic Solvers for the Boltzmann Transport Equation网络公开度学科排名<br>        http://impactfactor.cn/atr/?ISSN=BK0269345<br><br>        <br><br>书目名称Deterministic Solvers for the Boltzmann Transport Equation被引频次<br>        http://impactfactor.cn/tc/?ISSN=BK0269345<br><br>        <br><br>书目名称Deterministic Solvers for the Boltzmann Transport Equation被引频次学科排名<br>        http://impactfactor.cn/tcr/?ISSN=BK0269345<br><br>        <br><br>书目名称Deterministic Solvers for the Boltzmann Transport Equation年度引用<br>        http://impactfactor.cn/ii/?ISSN=BK0269345<br><br>        <br><br>书目名称Deterministic Solvers for the Boltzmann Transport Equation年度引用学科排名<br>        http://impactfactor.cn/iir/?ISSN=BK0269345<br><br>        <br><br>书目名称Deterministic Solvers for the Boltzmann Transport Equation读者反馈<br>        http://impactfactor.cn/5y/?ISSN=BK0269345<br><br>        <br><br>书目名称Deterministic Solvers for the Boltzmann Transport Equation读者反馈学科排名<br>        http://impactfactor.cn/5yr/?ISSN=BK0269345<br><br>        <br><br>

向下 发表于 2025-3-21 22:59:55

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祖传 发表于 2025-3-22 01:59:01

978-3-7091-1119-2Springer-Verlag/Wien 2011

发表于 2025-3-22 07:11:00

Sung-Min Hong,Anh-Tuan Pham,Christoph Jungemannfirst book on deterministic Boltzmann solvers for semiconductor devices.first comprehensive description of the required numerical methods.describes very recent and significant advances in the field of

最有利 发表于 2025-3-22 09:15:22

Computational Microelectronicshttp://image.papertrans.cn/d/image/269345.jpg

obstinate 发表于 2025-3-22 15:35:46

Abel Decmann,Attila Patócs,Peter IgazA device simulator for nanoscale strained SiGe double gate PMOSFETs based on the self-consistent solution of the 1D SE, 2D PE, and multi subband 1D BTE is developed, which is applicable for arbitrary crystallographic orientations and arbitrary channel directions.

obstinate 发表于 2025-3-22 18:20:47

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Neuralgia 发表于 2025-3-22 23:28:06

https://doi.org/10.1007/978-3-642-86814-6In this chapter a deterministic method used to solve the multisubband BTE is presented. The method is based on the Fourier expansion of the distribution function in the 2D .-space, which is analogous to the spherical harmonic expansion method for the bulk case .

充满人 发表于 2025-3-23 02:19:41

Bayesian Multilocus Linkage MappingThe electrostatic potential . (., .) in the device is the solution of the PE . where κ is dielectric constant, . is the positive elementary charge, and .. and .. are the ionized acceptor and donor concentrations, In this work the acceptors and donors are assumed to be completely ionized.

肥料 发表于 2025-3-23 08:17:57

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查看完整版本: Titlebook: Deterministic Solvers for the Boltzmann Transport Equation; Sung-Min Hong,Anh-Tuan Pham,Christoph Jungemann Book 2011 Springer-Verlag/Wien