讽刺文章
发表于 2025-3-21 19:46:27
书目名称Design and Realization of Novel GaAs Based Laser Concepts影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0268598<br><br> <br><br>书目名称Design and Realization of Novel GaAs Based Laser Concepts影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0268598<br><br> <br><br>书目名称Design and Realization of Novel GaAs Based Laser Concepts网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0268598<br><br> <br><br>书目名称Design and Realization of Novel GaAs Based Laser Concepts网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0268598<br><br> <br><br>书目名称Design and Realization of Novel GaAs Based Laser Concepts被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0268598<br><br> <br><br>书目名称Design and Realization of Novel GaAs Based Laser Concepts被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0268598<br><br> <br><br>书目名称Design and Realization of Novel GaAs Based Laser Concepts年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0268598<br><br> <br><br>书目名称Design and Realization of Novel GaAs Based Laser Concepts年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0268598<br><br> <br><br>书目名称Design and Realization of Novel GaAs Based Laser Concepts读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0268598<br><br> <br><br>书目名称Design and Realization of Novel GaAs Based Laser Concepts读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0268598<br><br> <br><br>
Interferons
发表于 2025-3-21 21:08:36
Mohamed El Amine Bekhouche,Kamel Adi ratio was found to be crucial for the long-term stability of QD properties during subsequent QD overgrowth and annealing. Results of MOVPE grown material properties used for device fabrication and limits of possible doping levels are outlined.
针叶类的树
发表于 2025-3-22 00:36:14
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Substance
发表于 2025-3-22 07:43:28
Book 2012tion storage, communication and material treatment, to name but a few. Novel structural and material concepts are needed in order to further push the performance limits of present devices and to open up new application areas. .This thesis demonstrates how key performance characteristics of three com
禁止
发表于 2025-3-22 11:18:23
MOVPE Processes, ratio was found to be crucial for the long-term stability of QD properties during subsequent QD overgrowth and annealing. Results of MOVPE grown material properties used for device fabrication and limits of possible doping levels are outlined.
放大
发表于 2025-3-22 15:58:55
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放大
发表于 2025-3-22 17:22:25
Design and Realization of Novel GaAs Based Laser Concepts
蜈蚣
发表于 2025-3-22 22:22:56
Semiconductor Laser Concepts, which is primarily employed for the infrared spectral range. Due to its versatility and ability to form dielectric mirrors for vertically emitting devices, (.). forms the basis for a wide range of applications in the near infrared spectrum, and is well-established for industrial mass production.
哀求
发表于 2025-3-23 04:16:12
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AMPLE
发表于 2025-3-23 06:56:44
Edge-Emitting Quantum Dot Lasers,suppression is achieved for long wavelength QDs. Stacks of QD layers emitting at . are grown which show complete wavelength stability upon overgrowth or annealing at 615.C and are used within a laser device.