concert
发表于 2025-3-25 06:52:33
Book 2022 electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. T
袋鼠
发表于 2025-3-25 09:51:14
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VERT
发表于 2025-3-25 15:27:32
Conclusions and Future Work,dislocations with unfamiliar core structures. Unfamiliar core structures are a result of multiple twinning and inclined twins that interact with defects. The presence of defect structures in NWs can diminish optoelectronic performance and so identifying the exact type of defects can help to guide efforts made in reducing their prevalence.
眉毛
发表于 2025-3-25 16:44:41
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Efflorescent
发表于 2025-3-25 20:30:51
Introduction,ause problems is the inability to perfectly combine mismatched material systems. Difficulty in combining different materials comes from lattice mismatch and differences in thermal expansion coefficients. These differences can generate dislocations that prevent devices from operating or make them unr
Yourself
发表于 2025-3-26 03:37:42
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绿州
发表于 2025-3-26 05:45:33
Defect Dynamics in Nanowires,t droplet consumption stage of growth. The origin of these defects is from the instability of the growth front between the crystal NW and the liquid Ga droplet as it is consumed, when the Ga flux is switched off [., .].
许可
发表于 2025-3-26 10:20:44
Conclusions and Future Work,itions, particularly during catalyst droplet consumption. Defects have been identified through the use of atomic resolution electron microscopy enabled by probe corrected scanning transmission electron microscope (STEM). A large variety of defect types have been observed, including familiar partial
公共汽车
发表于 2025-3-26 12:59:21
2190-5053 vealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.978-3-030-94064-5978-3-030-94062-1Series ISSN 2190-5053 Series E-ISSN 2190-5061
敲竹杠
发表于 2025-3-26 18:58:59
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