Denial
发表于 2025-3-21 17:43:30
书目名称Defects and Impurities in Silicon Materials影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0264723<br><br> <br><br>书目名称Defects and Impurities in Silicon Materials影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0264723<br><br> <br><br>书目名称Defects and Impurities in Silicon Materials网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0264723<br><br> <br><br>书目名称Defects and Impurities in Silicon Materials网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0264723<br><br> <br><br>书目名称Defects and Impurities in Silicon Materials被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0264723<br><br> <br><br>书目名称Defects and Impurities in Silicon Materials被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0264723<br><br> <br><br>书目名称Defects and Impurities in Silicon Materials年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0264723<br><br> <br><br>书目名称Defects and Impurities in Silicon Materials年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0264723<br><br> <br><br>书目名称Defects and Impurities in Silicon Materials读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0264723<br><br> <br><br>书目名称Defects and Impurities in Silicon Materials读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0264723<br><br> <br><br>
套索
发表于 2025-3-21 22:28:06
http://reply.papertrans.cn/27/2648/264723/264723_2.png
discord
发表于 2025-3-22 02:33:13
http://reply.papertrans.cn/27/2648/264723/264723_3.png
可耕种
发表于 2025-3-22 08:21:58
http://reply.papertrans.cn/27/2648/264723/264723_4.png
Cardiac
发表于 2025-3-22 09:20:30
http://reply.papertrans.cn/27/2648/264723/264723_5.png
AMPLE
发表于 2025-3-22 16:06:06
Oxygen Precipitation in Silicon,pitates are described from the viewpoint of classical nucleation theory. The initial states of oxygen precipitation as suggested by ab initio calculation are also shown. Results about the impact of intrinsic point defects, doping, and co-doping on oxygen precipitation are presented. The most importa
AMPLE
发表于 2025-3-22 18:27:00
Defect Characterization in Silicon by Electron-Beam-Induced Current and Cathodoluminescence Techniqharacterization of extended defects in Si. For these purposes, we use a scanning electron microscope (SEM) for electron beam irradiation. The electric current induced at the internal circuit and light emission from the specimen are used for the imaging of EBIC and CL, respectively. Using these techn
世俗
发表于 2025-3-23 00:58:57
Nuclear Methods to Study Defects and Impurities in Si Materials,tomic and electronic configuration of this atom. In the field of defects and impurities in semiconductors, the study of their hyperfine interaction can therefore contribute substantially to their identification and characterization. The introduction of radioactive isotopes as impurity atoms allows t
AWE
发表于 2025-3-23 03:44:41
http://reply.papertrans.cn/27/2648/264723/264723_9.png
Obvious
发表于 2025-3-23 06:22:44
http://reply.papertrans.cn/27/2648/264723/264723_10.png