古董
发表于 2025-3-26 21:04:34
Developments in Modern Historiographyercome this problem is the application of different kinds of buffer layers between the epitaxial layer and the substrate, and on the other hand, the use of substrates for the epitaxy with nearly the same lattice constant and thermal expansion coefficient. Another important question is the deviation
municipality
发表于 2025-3-27 01:17:12
Savita Malhotra,Subho Chakrabartigap donor level in GaAs, often referred to as EL2, is not as previously assumed due to substitutional oxygen on an As site, but is a defect complex involving a Ga vacancy. This defect makes it possible to grow undoped semi-insulating GaAs for the production of integrated circuits. Defect reactions c
课程
发表于 2025-3-27 07:33:55
https://doi.org/10.1007/978-81-322-1674-2ting GaAs for the first time. These oscillations were found at DC electric fields above 500 Vcm., about one order of magnitude below the electric-field threshold for Gunn oscillations. The activation energy of the oscillation frequency was found to be 0.8 eV corresponding to the dominant electron tr
Fissure
发表于 2025-3-27 13:14:59
Interaction Between Colloidal ParticlesThe multiple scattering-Xa molecular cluster model is used to study the A center in silicon. We show that this center can be created by Jahn-Teller effects over substitutional oxygen impurity in the lattice. Our defect model provides a consistent explanation for the EPR experimental results obtained for the Si-A center.
烦扰
发表于 2025-3-27 13:50:45
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1FAWN
发表于 2025-3-27 20:16:25
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largesse
发表于 2025-3-27 22:29:20
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acrimony
发表于 2025-3-28 03:33:41
https://doi.org/10.1007/3-540-11986-8Gitterfehler; Halbleiter; Structures; crystal; crystallographic defect; diffusion; electron; microscopy; sem
不合
发表于 2025-3-28 07:45:09
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小木槌
发表于 2025-3-28 10:51:10
Photoluminescence of defect complexes in silicon,he photoluminescence (PL) technique: (i) Defects incorporating transition metal ions, (ii) defects related with oxygen and carbon doping the silicon and (iii) dislocation induced defects. We shall briefly discuss the state of the art from the PL point of view as well as present new data for all three kinds of defect complexes.