paltry 发表于 2025-3-25 04:53:20
http://reply.papertrans.cn/27/2648/264711/264711_21.pngBAIL 发表于 2025-3-25 10:34:48
http://reply.papertrans.cn/27/2648/264711/264711_22.pngunstable-angina 发表于 2025-3-25 11:41:19
http://reply.papertrans.cn/27/2648/264711/264711_23.pnganticipate 发表于 2025-3-25 17:04:09
http://reply.papertrans.cn/27/2648/264711/264711_24.pngYag-Capsulotomy 发表于 2025-3-25 21:19:24
Main electron traps in gaas: Aggregates of antisite defects,CRASS 发表于 2025-3-26 01:13:05
http://reply.papertrans.cn/27/2648/264711/264711_26.pngexhilaration 发表于 2025-3-26 04:55:33
Dirk Pieter van Donk,Taco van der Vaartd, Si, Ge, SiC), III-V (AlSb, GaAs, GaSb, GaP, InAs, InP, InSb), II-VI (BaO, BaS, BeO, CaO, CaS, CaSe, CdO, CdS, CdSe, CdTe, MgO, SrO, SrS, ZnC, ZnS, ZnSe, ZnTe) and miscellaneous systems. The identification of defects via EPR is described as is the exploitation of that identification as a tool in fPatrimony 发表于 2025-3-26 10:42:00
Montserrat Corbera,Jaume Llibree a simple alternative, which can provide both qualitative and semiempirical quantitative descriptions of the localized states associated with defect complexes. It is similar in spirit with the “defect-molecule” model which has sometimes been used for qualitative work, but is defined in a way that aexigent 发表于 2025-3-26 15:28:28
http://reply.papertrans.cn/27/2648/264711/264711_29.pngacetylcholine 发表于 2025-3-26 18:17:48
http://reply.papertrans.cn/27/2648/264711/264711_30.png