paltry 发表于 2025-3-25 04:53:20

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BAIL 发表于 2025-3-25 10:34:48

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unstable-angina 发表于 2025-3-25 11:41:19

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anticipate 发表于 2025-3-25 17:04:09

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Yag-Capsulotomy 发表于 2025-3-25 21:19:24

Main electron traps in gaas: Aggregates of antisite defects,

CRASS 发表于 2025-3-26 01:13:05

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exhilaration 发表于 2025-3-26 04:55:33

Dirk Pieter van Donk,Taco van der Vaartd, Si, Ge, SiC), III-V (AlSb, GaAs, GaSb, GaP, InAs, InP, InSb), II-VI (BaO, BaS, BeO, CaO, CaS, CaSe, CdO, CdS, CdSe, CdTe, MgO, SrO, SrS, ZnC, ZnS, ZnSe, ZnTe) and miscellaneous systems. The identification of defects via EPR is described as is the exploitation of that identification as a tool in f

Patrimony 发表于 2025-3-26 10:42:00

Montserrat Corbera,Jaume Llibree a simple alternative, which can provide both qualitative and semiempirical quantitative descriptions of the localized states associated with defect complexes. It is similar in spirit with the “defect-molecule” model which has sometimes been used for qualitative work, but is defined in a way that a

exigent 发表于 2025-3-26 15:28:28

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acetylcholine 发表于 2025-3-26 18:17:48

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查看完整版本: Titlebook: Defect Complexes in Semiconductor Structures; Proceedings of the I J. Giber,F. Beleznay,J. László Conference proceedings 1983 Springer-Verl