语言学
发表于 2025-3-27 00:27:21
http://reply.papertrans.cn/25/2406/240503/240503_31.png
CRAFT
发表于 2025-3-27 01:14:24
e and collector regions determine the Collector-base breakdown voltage of the device and the collector-emitter breakdown voltage is determined by the collector-base breakdown and the current gain of the transistor. While the power bipolar transistors provide a very low voltge drop to the main curren
outer-ear
发表于 2025-3-27 06:39:21
n-state, the merit of a DMOSFET is judged by the total resistance it offers to the flow of current (on-resistance) and also the rate of change of drain current with the change in gate bias (transconductance). The gate bias at which an inversion layer is formed (threshold voltage) is also an importan
Melodrama
发表于 2025-3-27 11:15:39
https://doi.org/10.1007/978-981-10-7248-2s called the maximum blocking voltage of the device. Depending on the design of the JFET, this capability may be limited by either the avalanche breakdown of the gate-source junction or the device edge termination. To switch the device from the on-state to the forward blocking state, a negative gate
Inclement
发表于 2025-3-27 16:10:18
https://doi.org/10.1007/978-981-10-7248-2responds to a reducing breakover voltage. For a rated gate trigger current, the breakover voltage can be reduced to the built-in voltage of a pn junction and thereafter, the forward characteristics resemble those of a p-i-n diode. To turn the device off from the forward on-state to a forward blockin
责难
发表于 2025-3-27 20:23:40
http://reply.papertrans.cn/25/2406/240503/240503_36.png
施加
发表于 2025-3-27 23:13:33
Power Bipolar Transistors,e and collector regions determine the Collector-base breakdown voltage of the device and the collector-emitter breakdown voltage is determined by the collector-base breakdown and the current gain of the transistor. While the power bipolar transistors provide a very low voltge drop to the main curren
sigmoid-colon
发表于 2025-3-28 04:12:23
http://reply.papertrans.cn/25/2406/240503/240503_38.png
muscle-fibers
发表于 2025-3-28 08:07:12
http://reply.papertrans.cn/25/2406/240503/240503_39.png
吗啡
发表于 2025-3-28 10:26:57
Thyristors,responds to a reducing breakover voltage. For a rated gate trigger current, the breakover voltage can be reduced to the built-in voltage of a pn junction and thereafter, the forward characteristics resemble those of a p-i-n diode. To turn the device off from the forward on-state to a forward blockin