Diatribe
发表于 2025-3-30 09:02:17
0893-3405 ograms to many cases of device developments. The text began as publications in journals and con ference proceedings, as weil as lecture notes for a Hewlett-Pac978-1-4612-9605-8978-1-4613-2553-6Series ISSN 0893-3405
逢迎春日
发表于 2025-3-30 14:09:31
https://doi.org/10.1057/9780230288447ram for GaAs MESFETs. Most of the programs mentioned above were developed as research tools rather than for the general user(design tools). More stress had been put on the development of a stable and fast algorithm and the implementations of the physical mechanisms rather than on the user interface.
CIS
发表于 2025-3-30 19:41:55
Gunnar Eliasson,Pontus Braunerhjelminterline capacitance component in the total parasitic capacitance of a circuit. This means that the parasitic capacitance is not scaled down proportionally as the horizontal dimensions are scaled down.
barium-study
发表于 2025-3-30 21:59:33
The Surface Inversion Problem in Trench Isolated CMOS