exostosis
发表于 2025-3-30 10:30:14
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出汗
发表于 2025-3-30 12:58:52
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僵硬
发表于 2025-3-30 18:27:05
The Surface Inversion Problem in Trench Isolated CMOSr transistor gain will be reduced, thereby increasing the latchup initiating current. In a p-well process, the reduction of latchup sensitivity is achieved from reduction of the lateral parasitic p-n-p current gain.
外观
发表于 2025-3-30 21:58:00
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TOM
发表于 2025-3-31 02:36:50
Book 1988Latest editionaid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters
Scintillations
发表于 2025-3-31 07:50:35
0893-3405barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters 978-1-4612-8956-2978-1-4613-1695-4Series ISSN 0893-3405
显微镜
发表于 2025-3-31 10:02:52
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hypotension
发表于 2025-3-31 15:21:47
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恩惠
发表于 2025-3-31 17:52:54
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调色板
发表于 2025-4-1 00:23:35
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