scoliosis
发表于 2025-3-28 16:15:44
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EXALT
发表于 2025-3-28 20:26:17
Compact Models for Vertical Bipolar Transistors,ions which together define a given model. This description will be limited to vertical . transistors for integrated circuits, including the substrate effects of the parasitic . transistor. Vertical . transistors also exist, but they require no new fundamental additions.
Servile
发表于 2025-3-29 00:41:25
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Fibroid
发表于 2025-3-29 05:50:20
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芳香一点
发表于 2025-3-29 08:11:39
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vasospasm
发表于 2025-3-29 13:53:42
Models for the JFET and the MESFET, field-effect transistor (MESFET) are considerable, their physical operation is almost identical. The modelling of these devices is therefore discussed in one chapter. In both cases transistor operation is achieved by depleting an already existing channel region via a gate-controlled . junction or a
Outwit
发表于 2025-3-29 18:26:53
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