Ballerina 发表于 2025-3-28 15:45:51
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https://doi.org/10.1007/b116478 as growth temperature, pressure, and growth chamber geometry. However, the dislocation multiplication in SiC crystal grown by PVT method are generated by excessed thermal stresses caused by the nonuniform temperature field in the SiC ingot. A 2 dimensional transient finite element model based on th我怕被刺穿 发表于 2025-3-28 23:40:01
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https://doi.org/10.1007/b116478o be solved. If thin films have better mechanical properties, it can not only reduce the creep behavior, but also extend its lifetime..In this study, we use solid solution strengthening to improve the mechanism of the material, adding foreign atom Mg to Al thin films in order to increase the resista干旱 发表于 2025-3-29 10:25:31
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Conference Proceedings of the Society for Experimental Mechanics Serieshttp://image.papertrans.cn/c/image/223473.jpg宽大 发表于 2025-3-29 17:42:45
https://doi.org/10.1007/978-3-319-41543-7Experimental Mechanics; Conference Proceedings of the Society for Experimental Mechanics; Time Depende比赛用背带 发表于 2025-3-29 21:10:56
978-3-319-82380-5The Society for Experimental Mechanics, Inc. 2017隐语 发表于 2025-3-30 02:40:27
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Analyses of Nanoscale to Microscale Strength and Crack-Tip Stresses Using Nanomechanical Raman Specr temperature dependent strength and crack propagation behavior. Elastic modulus, hardness, creep exponent, creep strain rate and thermal activation volume of the different alloy 617 samples were studied through nanoindentation method. Indentation size effect (ISE) was studied in terms of hardness v