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发表于 2025-3-21 16:31:11
书目名称Built-in-Self-Test and Digital Self-Calibration for RF SoCs影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0191906<br><br> <br><br>书目名称Built-in-Self-Test and Digital Self-Calibration for RF SoCs影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0191906<br><br> <br><br>书目名称Built-in-Self-Test and Digital Self-Calibration for RF SoCs网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0191906<br><br> <br><br>书目名称Built-in-Self-Test and Digital Self-Calibration for RF SoCs网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0191906<br><br> <br><br>书目名称Built-in-Self-Test and Digital Self-Calibration for RF SoCs被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0191906<br><br> <br><br>书目名称Built-in-Self-Test and Digital Self-Calibration for RF SoCs被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0191906<br><br> <br><br>书目名称Built-in-Self-Test and Digital Self-Calibration for RF SoCs年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0191906<br><br> <br><br>书目名称Built-in-Self-Test and Digital Self-Calibration for RF SoCs年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0191906<br><br> <br><br>书目名称Built-in-Self-Test and Digital Self-Calibration for RF SoCs读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0191906<br><br> <br><br>书目名称Built-in-Self-Test and Digital Self-Calibration for RF SoCs读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0191906<br><br> <br><br>
大约冬季
发表于 2025-3-21 21:26:17
Built-in-Self-Test and Digital Self-Calibration for RF SoCs
歪曲道理
发表于 2025-3-22 02:06:23
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发表于 2025-3-22 04:47:23
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Magnificent
发表于 2025-3-22 09:23:25
Built-in-Self-Test and Digital Self-Calibration for RF SoCs978-1-4419-9548-3Series ISSN 2191-8112 Series E-ISSN 2191-8120
persistence
发表于 2025-3-22 15:31:01
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弄脏
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牌带来
发表于 2025-3-22 21:19:00
2191-8112 on-chip testing capabilities as well as on-the-fly calibratiThis book will introduce design methodologies, known as Built-in-Self-Test (BiST) and Built-in-Self-Calibration (BiSC), which enhance the robustness of radio frequency (RF) and millimeter wave (mmWave) integrated circuits (ICs). These circu
projectile
发表于 2025-3-23 05:02:47
2191-8112 ill result in enhancing the yield (percentage of working chips in a high volume run) of RF and mmWave ICs which will enable successful manufacturing of such microchips in high volume. 978-1-4419-9547-6978-1-4419-9548-3Series ISSN 2191-8112 Series E-ISSN 2191-8120
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发表于 2025-3-23 07:12:42
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