欺骗世家 发表于 2025-3-25 03:34:41
The Capture/Emission Time Map Approach to the Bias Temperature Instabilityare the temperature- and bias-independent power-law time exponent during stress including saturation at longer times, the long logarithmic-like recovery traces, as well as differences and similarities between DC and AC stress.职业拳击手 发表于 2025-3-25 08:41:25
tress, duty factor dependence and bias dependence.Explains tThis book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of researcLament 发表于 2025-3-25 12:34:30
http://reply.papertrans.cn/19/1855/185415/185415_23.pngbifurcate 发表于 2025-3-25 17:49:51
Statistical Characterization of BTI-Induced High-k Dielectric Traps in Nanoscale Transistorspredict 发表于 2025-3-25 22:02:29
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Understanding Negative-Bias Temperature Instability from Dynamic Stress Experiments不开心 发表于 2025-3-26 14:57:49
A Comprehensive Modeling Framework for DC and AC NBTIHerbivorous 发表于 2025-3-26 20:03:16
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