海市蜃楼
发表于 2025-3-21 18:19:35
书目名称Atomic and Nanometer-Scale Modification of Materials影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0164792<br><br> <br><br>书目名称Atomic and Nanometer-Scale Modification of Materials影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0164792<br><br> <br><br>书目名称Atomic and Nanometer-Scale Modification of Materials网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0164792<br><br> <br><br>书目名称Atomic and Nanometer-Scale Modification of Materials网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0164792<br><br> <br><br>书目名称Atomic and Nanometer-Scale Modification of Materials被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0164792<br><br> <br><br>书目名称Atomic and Nanometer-Scale Modification of Materials被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0164792<br><br> <br><br>书目名称Atomic and Nanometer-Scale Modification of Materials年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0164792<br><br> <br><br>书目名称Atomic and Nanometer-Scale Modification of Materials年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0164792<br><br> <br><br>书目名称Atomic and Nanometer-Scale Modification of Materials读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0164792<br><br> <br><br>书目名称Atomic and Nanometer-Scale Modification of Materials读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0164792<br><br> <br><br>
MURAL
发表于 2025-3-21 23:06:02
STM-Induced Modification and Electrical Properties of Surfaces on the Atomic and Nanometer Scales,actions and the effects of the electrostatic field produced by a voltage pulse. This process is demonstrated by the controlled removal and redeposition of individual atoms or clusters of Si atoms from Si(111). We then show that due to the elastic coupling of surface atoms, there is a material-depend
Biofeedback
发表于 2025-3-22 02:29:30
Alkali Metals on III-V (110) Semiconductor Surfaces: Overlayer Properties and Manipulation Via STM,lectric field due to the field gradients associated with step edges. We have exploited a similar phenomenon, the large field gradients in the vicinity of the STM tip, to induce the directional diffusion of Cs and K atoms adsorbed on room temperature GaAs(110) and InSb(110). The geometric and electro
Saline
发表于 2025-3-22 07:14:42
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敏捷
发表于 2025-3-22 08:43:34
Writing of Local, Electrically Active Structures in Amorphous Silicon Films by Scanning Tunneling M scanning tunneling microscopy (STM) by creating electrically active structures on a nanometer-scale. The intense electron beam provided by the tip of the STM leads to characteristic changes of the layer conductivity (electrically active structures), which is interpreted as to arise from local, elec
危机
发表于 2025-3-22 16:24:16
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JAUNT
发表于 2025-3-22 17:53:31
Vibrational Heating and Atom Transfer with the STM,ng. The resulting vibrational distribution is approximately Maxwell-Boltzmann, with a characteristic vibrational temperature. A simple expression is given for this vibrational temperature as a function of the tunneling current. Calculations indicate that vibrational heating by inelastic tunneling pl
Panther
发表于 2025-3-23 00:16:19
Tip-Induced Modifications of Electronic and Atomic Structure,h can move atoms on the surface. Using the results of self-consistent calculations for the interaction energy we studied the states of a single atom (Al and Xe) between tip and sample. In particular, we investigated the perpendicular and lateral motions of the atom, and the resonant tunneling throug
intrude
发表于 2025-3-23 04:22:32
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restrain
发表于 2025-3-23 08:29:48
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