resistant
发表于 2025-3-26 23:08:12
Ion Beam Studies of Metal-Metal and Metal-Semiconductor Reactionscess temperatures are below the eutectic. Although backscattering techniques provide depth-microscopy, supplemental measurements are often required to establish lateral uniformity and the relative importance of grain boundary and bulk diffusion.
机密
发表于 2025-3-27 01:48:23
Encyclopedic Dictionary of Polymersoms was located in the metal, in the latter they were entirely contained by the oxide layer; see Fig. 1. The depths of the implants after both the air-formed and pre-formed oxide films had been thickened anodically, were determined using a 2 MeV He beam in the manner described in detail in Ref. (1).
nostrum
发表于 2025-3-27 06:28:01
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恶心
发表于 2025-3-27 10:56:05
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BOGUS
发表于 2025-3-27 15:44:27
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Cardiac-Output
发表于 2025-3-27 20:29:23
Movement of Ions During the Anodic Oxidation of Aluminumoms was located in the metal, in the latter they were entirely contained by the oxide layer; see Fig. 1. The depths of the implants after both the air-formed and pre-formed oxide films had been thickened anodically, were determined using a 2 MeV He beam in the manner described in detail in Ref. (1).
Coronary-Spasm
发表于 2025-3-28 01:34:35
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四指套
发表于 2025-3-28 03:55:59
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Metamorphosis
发表于 2025-3-28 08:54:13
Reactions of Thin Metal Films with Si or SiO2 Substratessilicide in the form of an intermediate layer largely free of oxygen. The oxygen originally bound to the Si in the SiO. is transferred to the remaining metal layer. Residual oxygen “in the metal film and metal oxides on the metal film influence the silicide formation.
obsession
发表于 2025-3-28 10:30:00
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