无能力 发表于 2025-3-23 10:21:14
Methodology for Modelling of Surface Potential, Ionization and Breakdown of Graphene Field-Effect Teral electric field and length of saturation velocity region (LVSR) of single- and double-gate GNRFETs. Section . proposes a model for ionization coefficient of GNR, and finally, Sect. . presents analytical approaches to calculate breakdown voltage of single- and double-gate GNRFETs. In addition, socondemn 发表于 2025-3-23 14:11:07
Results and Discussion on Ionization and Breakdown of Graphene Field-Effect Transistor, respect to structural parameters in this chapter. In addition, ionization coefficient is calculated with respect to inverse electric field. Finally, the breakdown voltage is calculated for DG- and SG-GNRFETs and the trends and profiles are discussed. Table . shows default values for all the paramet先行 发表于 2025-3-23 21:27:29
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Mohammad A. Raza,Matthew L. Mintze nanoscale dimensions, silicon is facing limitations for downscaling such as short-channel effects. As a result, new device concepts such as graphene FETs are being introduced as alternatives to silicon. Since graphene has a zero bandgap, graphene nanoribbon of this material has been introduced to补充 发表于 2025-3-24 13:52:08
https://doi.org/10.1007/978-981-10-6550-7GNRFET; Breakdown Voltage (BV); Length of Velocity Saturation Region (LVSR); Gate Voltages; Semiconductogentle 发表于 2025-3-24 18:44:36
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Iraj Sadegh Amiri,Mahdiar GhadiryProvides analytical models for lateral electric field and length of velocity saturation region of graphene nanoribbon based field effect transistors (GNR-based FETs).Discusses an analytical model for招募 发表于 2025-3-25 00:21:52
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