Flexible
发表于 2025-3-21 17:57:41
书目名称Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0156640<br><br> <br><br>书目名称Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0156640<br><br> <br><br>书目名称Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0156640<br><br> <br><br>书目名称Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0156640<br><br> <br><br>书目名称Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0156640<br><br> <br><br>书目名称Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0156640<br><br> <br><br>书目名称Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0156640<br><br> <br><br>书目名称Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0156640<br><br> <br><br>书目名称Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0156640<br><br> <br><br>书目名称Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0156640<br><br> <br><br>
Clinch
发表于 2025-3-21 22:15:41
Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor
宽敞
发表于 2025-3-22 01:53:42
http://reply.papertrans.cn/16/1567/156640/156640_3.png
enterprise
发表于 2025-3-22 04:58:26
2191-530X s of this,simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used 978-981-10-6549-1978-981-10-6550-7Series ISSN 2191-530X Series E-ISSN 2191-5318
painkillers
发表于 2025-3-22 12:18:20
http://reply.papertrans.cn/16/1567/156640/156640_5.png
枪支
发表于 2025-3-22 14:00:49
2191-530X nsistors (GNR-based FETs).Discusses an analytical model for This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionizati
相一致
发表于 2025-3-22 18:44:12
Luis Moraleda-Novo,Primitivo Gómez-Carderoficient of GNR, and finally, Sect. . presents analytical approaches to calculate breakdown voltage of single- and double-gate GNRFETs. In addition, some parts of the results are presented here for the purpose of clarification and will not be repeated in the results and discussion chapter.
魅力
发表于 2025-3-22 23:23:58
http://reply.papertrans.cn/16/1567/156640/156640_8.png
袭击
发表于 2025-3-23 02:07:00
Methodology for Modelling of Surface Potential, Ionization and Breakdown of Graphene Field-Effect Tficient of GNR, and finally, Sect. . presents analytical approaches to calculate breakdown voltage of single- and double-gate GNRFETs. In addition, some parts of the results are presented here for the purpose of clarification and will not be repeated in the results and discussion chapter.
睨视
发表于 2025-3-23 06:59:03
http://reply.papertrans.cn/16/1567/156640/156640_10.png