BOOR
发表于 2025-3-23 13:38:05
High Electron Mobility Transistors,her mobility and comparably lower bandgap. If the bandgap alignment of the two materials is appropriately chosen, a channel forms due solely to the alignmentof the band edges and not, as for silicon MOSFETs or III-V MESFETs , due to an oxide/semiconductor interface or doping profiles. The channel material is not intentionally doped.
引起
发表于 2025-3-23 16:29:20
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Hallmark
发表于 2025-3-23 19:58:31
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CREEK
发表于 2025-3-24 00:37:00
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Oratory
发表于 2025-3-24 03:18:58
978-3-7091-7193-6Springer-Verlag Wien 2004
掺和
发表于 2025-3-24 07:32:30
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事物的方面
发表于 2025-3-24 13:02:50
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伪善
发表于 2025-3-24 18:15:59
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贸易
发表于 2025-3-24 20:53:58
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一起平行
发表于 2025-3-25 03:10:15
Vassil Palankovski,Rüdiger QuayFirst full and comprehensive modeling of relevant compound semiconductors.Verified by precise simulation of real-state-of-the-art devices in over 25 different simulation examples.Bridges the gap betwe