烧烤 发表于 2025-3-25 06:40:35

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Outwit 发表于 2025-3-25 09:41:07

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Assemble 发表于 2025-3-25 14:17:00

Umweltmanagement aus politischer Sichtated with the device miniaturization. Thus, much attention has recently been paid to the mobility enhancement technology through applying strain into CMOS channels. This chapter reviews this strained-Si CMOS technology with an emphasis on the mechanism of mobility enhancement due to strain. The devi

辩论 发表于 2025-3-25 19:52:48

Umweltmanagement aus politischer Sicht MOS device on the Si(110) surface, high-speed and low flicker noise p-MOSFETs can be realized. Furthermore, the current drivability of p-MOS and n-MOS which are balanced in the CMOS (balanced CMOS) on Si(110) surface can also be realized. These devices are very useful for application to analog/digi

预定 发表于 2025-3-25 21:21:04

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intercede 发表于 2025-3-26 01:30:34

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GEON 发表于 2025-3-26 04:22:46

,Vom Controlling zum Ökocontrolling,ng Ge surface cleaning, surface annealing in ammonia, and the effect of nitridation on .—. and leakage current characteristics are presented and discussed. Electrical data obtained by our group for devices incorporating alumina (Al.O.) and hafnia (HfO.) dielectrics is presented and explained. Capaci

vitreous-humor 发表于 2025-3-26 08:51:03

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conscience 发表于 2025-3-26 15:03:05

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全能 发表于 2025-3-26 19:31:40

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查看完整版本: Titlebook: Advanced Gate Stacks for High-Mobility Semiconductors; Athanasios Dimoulas,Evgeni Gusev,Marc Heyns Book 2007 Springer-Verlag Berlin Heidel