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1568-2609 nd p-type doped material, influence of impurities (oxygen, hRecently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requOmniscient 发表于 2025-3-22 03:03:14
978-1-4020-3474-9Springer Science+Business Media B.V. 2005V切开 发表于 2025-3-22 07:45:07
Zinc Oxide - A Material for Micro- and Optoelectronic Applications978-1-4020-3475-6Series ISSN 1568-2609可商量 发表于 2025-3-22 11:10:05
NATO Science Series II: Mathematics, Physics and Chemistryhttp://image.papertrans.cn/xyz/image/1061121.jpgcliche 发表于 2025-3-22 14:20:15
https://doi.org/10.1007/1-4020-3475-XAbsorption; Transmission; exciton; microscopy; optical properties; optics; spectroscopy; thin films依法逮捕 发表于 2025-3-22 21:00:03
Norbert H. Nickel,Evgenii TerukovLatest research results on the fabrication and fundamental understanding of ZnO and ZnO based devices.ZnO bulk and layer growth of undoped and p-type doped material, influence of impurities (oxygen, h2否定 发表于 2025-3-22 21:28:15
Conference proceedings 2005er deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al A犬儒主义者 发表于 2025-3-23 02:18:21
http://reply.papertrans.cn/107/10612/1061121/1061121_9.png整顿 发表于 2025-3-23 07:47:51
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