壕沟
发表于 2025-3-25 06:04:26
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秘方药
发表于 2025-3-25 07:59:21
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Perigee
发表于 2025-3-25 15:36:40
Gerald Goldstein,Ralph E. TarterIn 1965, Gordon Moore proposed the rule that the number of devices on the wafer would be doubled every 18–24 months. This “.” describes the continuous and rapid trend of scaling. Every reduction of feature size will be called a technology generation or technology node. The technology nodes include 0.18, 0.13, 90, 65, and 45 μm.
原谅
发表于 2025-3-25 19:15:41
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残酷的地方
发表于 2025-3-25 23:38:37
J. Takala,J. Klossner,J. Irjala,S. HannulaAccording to MOSFET scaling rule, the depletion layer formed in the channel of traditional 2D MOSFET near source and drain, the short-channel effect (SCE) has become inevitable along with the scaling of .. dimension.
高贵领导
发表于 2025-3-26 00:37:47
J. Takala,J. Klossner,J. Irjala,S. HannulaThere will be junctions in the channels of source and drain of traditional inversion-mode (IM) MOSFET or FinFET, such as the nFET with doping style of N.PN..
压倒性胜利
发表于 2025-3-26 04:34:21
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开始从未
发表于 2025-3-26 10:19:51
H. R. Freund,Z. Gimmon,J. E. FischerHuge efforts are put into CMOS scaling to push the limits of Moore’s law. Semiconductor ICs manufacturing companies are currently ramping up 16-nm/14-nm FinFET processes, with 7 and 5 nm just around the corner.
吗啡
发表于 2025-3-26 13:37:11
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多骨
发表于 2025-3-26 20:39:57
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