Audiometry 发表于 2025-3-28 16:20:02

https://doi.org/10.1007/978-3-642-95617-1nd lower cost. As a matter of fact, the last mainstream memory, NAND Flash memory, was created decades ago. Nowadays, NAND Flash memory, based on metal-oxide-semiconductor field-effect-transistor with an additional floating gate, is still one of the most popular nonvolatile memories. However, its sp

Frenetic 发表于 2025-3-28 20:30:19

https://doi.org/10.1007/978-3-642-95617-1n the other hand, mainly driven by the success of Solid State Drives (SSDs), capacity requirement has grown dramatically to the extent that standard packaging (and design) techniques are no longer able to sustain the pace. In order to solve this issue, two approaches are possible: advanced die stack

谄媚于性 发表于 2025-3-29 00:39:56

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耕种 发表于 2025-3-29 03:10:49

https://doi.org/10.1007/978-3-642-95617-1odes and non-binary low-density parity-check (LDPC) codes. Both of these techniques are inspired by traditional coding theory; however, in both cases, we depart from classical approaches and develop new concepts specifically designed to take advantage of inherent channel characteristics that describ

expunge 发表于 2025-3-29 10:29:58

Three-Dimensional Imaging: Technical Aspectsional (2D) scaling, it is facing various limitations such as lithography cost and cell-to-cell coupling interference. To sustain the trend of bit-cost reduction beyond 10 nm technology node, 3D NAND flash memory is considered as the next generation technique. Further, emerging memories called storag

labyrinth 发表于 2025-3-29 13:59:39

https://doi.org/10.1007/978-94-017-7512-03-D NAND Flash Memories; 3-D Flash Memory Technology; 3-D planar charge trap technology; Die Stacking F

plasma-cells 发表于 2025-3-29 19:05:26

978-94-024-1365-6Springer Science+Business Media Dordrecht 2016

感情 发表于 2025-3-29 20:07:57

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Nonthreatening 发表于 2025-3-29 23:54:13

Qingxin Yang,Evgenii V. Kondratenkoh memory die, this density is defined as the ratio between the storage capacity of the die, Die_Capacity, and its silicon area, Die_Size. In this chapter we present some of the most advanced architectures of 3D arrays with vertical channels, which were mainly developed to increase Bit_Density and reduce the Source Line effect.

Influx 发表于 2025-3-30 07:31:56

https://doi.org/10.1007/978-3-642-95617-1odes and non-binary low-density parity-check (LDPC) codes. Both of these techniques are inspired by traditional coding theory; however, in both cases, we depart from classical approaches and develop new concepts specifically designed to take advantage of inherent channel characteristics that describe non-volatile memories.
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查看完整版本: Titlebook: 3D Flash Memories; Rino Micheloni Book 2016 Springer Science+Business Media Dordrecht 2016 3-D NAND Flash Memories.3-D Flash Memory Techno