谎言
发表于 2025-3-26 23:05:49
s well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cros978-94-024-1365-6978-94-017-7512-0
temperate
发表于 2025-3-27 01:27:42
Bogdan Rȩbiasz,Bartłomiej Gaweł,Iwona Skalnaand compliance with current NAND device specification. In this chapter we focus on the most straightforward 3D architecture, the Stacked one, which is built by using arrays with horizontal channels and horizontal gates: this kind of arrays is a simple stack of planar memories. Drain contacts and bit
躲债
发表于 2025-3-27 05:26:41
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废除
发表于 2025-3-27 09:54:24
https://doi.org/10.1007/978-3-642-95617-1fects caused by the thick gate. In fact, to make sure that electrons don’t leak away from the floating gate, gate thickness can’t be too thin. Moreover, since the number of electrons trapped inside the floating gate is less than 100 at 20 nm, losing few electrons can cause severe reliability issues
厌食症
发表于 2025-3-27 16:15:26
https://doi.org/10.1007/978-3-319-03677-9as seen in its entire history. Since the focus of this book is NAND Flash, we will examine the dramatic changes in (1) the vendor landscape, (2) the fundamental technology used to create the NAND memory cell, and (3) changes in usages in different segments which have made SSDs the critical growth se
nurture
发表于 2025-3-27 19:12:30
https://doi.org/10.1007/978-3-319-03677-9n terms of reliability and expected performances. Starting from an analysis of basic reliability issues related to both physical and architectural aspects affecting NAND memories, the specific physical mechanisms impacting the reliability of 2D CT NAND will be addressed. Then, a review of the main p
GREG
发表于 2025-3-27 23:22:56
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去世
发表于 2025-3-28 05:12:29
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灰姑娘
发表于 2025-3-28 07:59:24
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headlong
发表于 2025-3-28 13:46:01
M. Oudkerk,S. Mali,S. Tjiam,W. A. Kalendergeometries simultaneously. Transistor geometries are formed by the deep trench through a multiple polysilicon/oxide stack. The most popular cells stacks are Vertical-Channel (VC) and Vertical-Gate (VG). In VC gate-all-around type, the channel is realized by etching a hole through the layers stack in