PRE 发表于 2025-3-25 07:17:52

http://reply.papertrans.cn/48/4752/475174/475174_21.png

plasma-cells 发表于 2025-3-25 08:18:08

A New Method for Boron Doping of Silicon by Implantation of BF2-Moleculeserature BF. implantation the annealing data indicate that an amorphous layer was formed; the sheet resistivity after 650°C anneal is a factor of 10 lower than for an equivalent energy boron implant and the samples are nearly completely annealed. For doses of ⩽10. cm. there is no marked difference in

EXUDE 发表于 2025-3-25 12:24:57

http://reply.papertrans.cn/48/4752/475174/475174_23.png

instulate 发表于 2025-3-25 17:36:53

http://reply.papertrans.cn/48/4752/475174/475174_24.png

chemical-peel 发表于 2025-3-25 23:50:54

http://reply.papertrans.cn/48/4752/475174/475174_25.png

宽容 发表于 2025-3-26 02:56:09

http://reply.papertrans.cn/48/4752/475174/475174_26.png

帽子 发表于 2025-3-26 07:37:25

http://reply.papertrans.cn/48/4752/475174/475174_27.png

沙漠 发表于 2025-3-26 10:12:12

978-3-642-80662-9Springer-Verlag, Berlin · Heidelberg 1971

发展 发表于 2025-3-26 13:01:25

http://reply.papertrans.cn/48/4752/475174/475174_29.png

藐视 发表于 2025-3-26 18:34:43

http://reply.papertrans.cn/48/4752/475174/475174_30.png
页: 1 2 [3] 4 5 6 7
查看完整版本: Titlebook: Ion Implantation in Semiconductors; Proceedings of the I Ingolf Ruge (Professor an der Technischen Universi Conference proceedings 1971 Spr