PRE
发表于 2025-3-25 07:17:52
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plasma-cells
发表于 2025-3-25 08:18:08
A New Method for Boron Doping of Silicon by Implantation of BF2-Moleculeserature BF. implantation the annealing data indicate that an amorphous layer was formed; the sheet resistivity after 650°C anneal is a factor of 10 lower than for an equivalent energy boron implant and the samples are nearly completely annealed. For doses of ⩽10. cm. there is no marked difference in
EXUDE
发表于 2025-3-25 12:24:57
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instulate
发表于 2025-3-25 17:36:53
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chemical-peel
发表于 2025-3-25 23:50:54
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宽容
发表于 2025-3-26 02:56:09
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帽子
发表于 2025-3-26 07:37:25
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沙漠
发表于 2025-3-26 10:12:12
978-3-642-80662-9Springer-Verlag, Berlin · Heidelberg 1971
发展
发表于 2025-3-26 13:01:25
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藐视
发表于 2025-3-26 18:34:43
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