ineluctable
发表于 2025-3-25 06:54:03
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厌烦
发表于 2025-3-25 07:35:57
Promising Results of Plasma Assisted MBE for Optoelectronic Applications,loys, such as quaternary InAlGaN alloy thin films and quantum well heterostructures, have also been grown by PAMBE with good control of the In incorporation. The layers exhibited strong PL up to room temperature and lasing under optical pumping.
Rustproof
发表于 2025-3-25 12:09:21
Stimulated Emission and Gain in GaN Epilayers Grown on Si,ifetime resulting in difference in excited volume of the epitaxial layers. The net-gain spectra exhibited lower optical losses in structures containing the interlayer, apparently due to an improved waveguide structure.
Insul岛
发表于 2025-3-25 17:28:30
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很像弓]
发表于 2025-3-25 20:47:15
Basic Device Issues in UV Solid-State Emitters and Detectors,de heterostructures with a high aluminum molar fraction are becoming more formidable. The solutions to device problems lie in using better substrates (with bulk AlN substrates in non-polar orientations being especially promising), using better epitaxial growth techniques, improving device design and using better contact technology and design.
fibroblast
发表于 2025-3-26 03:46:06
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Iatrogenic
发表于 2025-3-26 07:13:23
Small Internal Electric Fields in Quaternary InAlGaN Heterostructures,series of samples. On the contrary, from the experimental results, we concluded that the built-in electric field is negligible in the samples of series A and is rather weak in those of series B. Possible reasons for the controversies between theory and experiment are suggested.
Cholesterol
发表于 2025-3-26 10:42:48
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有组织
发表于 2025-3-26 15:35:18
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秘传
发表于 2025-3-26 20:51:21
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