Aerophagia
发表于 2025-3-26 22:33:44
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LAVA
发表于 2025-3-27 01:48:22
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insurgent
发表于 2025-3-27 06:28:32
Odorico M. Mendizabal,Parisa Jalili Marandi,Fernando Luís Dotti,Fernando Pedone
观点
发表于 2025-3-27 10:00:20
Majority PFET-Based Radiation Tolerant Static Random Access Memory Cell,adiation tolerance. The leakage currents in NMOS access transistors increase rapidly by the radiation bombardment, whereas they are not affected in the case of PMOS access transistors. The proposed MPRT SRAM cell achieves 1.2× higher value of . (stands for critical charge) in comparison with the We-
jaunty
发表于 2025-3-27 15:05:02
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Mets552
发表于 2025-3-27 21:47:07
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