Albinism
发表于 2025-3-30 11:36:11
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narcotic
发表于 2025-3-30 15:42:59
Hans Bauer,Warren J. Blackmany has a significant advantage related to the possibility to grow insulating SiO. overlayers by simple thermal oxidation, naturally leading to the MOS device configuration. Albeit fabricated in recent years by many groups, SiC MOS field-effect transistors have yet not met the expectations. Their fail