Ambulatory
发表于 2025-3-25 06:28:46
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Motilin
发表于 2025-3-25 09:36:15
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乐意
发表于 2025-3-25 14:47:22
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carotid-bruit
发表于 2025-3-25 16:08:19
ing the above problems was made in 1969, with the introduction of heterostructures. In a heterostructure laser, one replaces the simple . junction with multiple semiconductor layers of different compositions. The immediate impact to laser performance due to heterostructures was reinforced over the y
百灵鸟
发表于 2025-3-25 22:57:31
ing the above problems was made in 1969, with the introduction of heterostructures. In a heterostructure laser, one replaces the simple . junction with multiple semiconductor layers of different compositions. The immediate impact to laser performance due to heterostructures was reinforced over the y
新娘
发表于 2025-3-26 04:10:31
Jiri BimLS growth is therefore proposed to produce single crystalline silicon (c-Si) film over an amorphous oxide layer, without crystalline seeding. It is demonstrated that VLS growth in the spatial confinement of a cavity produces nanometer-thick c-Si ribbons over a micron area scale with a well controlle
共和国
发表于 2025-3-26 06:45:46
Stefka Nedelcheva,Petya Tsvetkovais independent of the fin width .. at .. ≤ 0.37 μm; the value of . for FinFETs investigated is higher than for their planar counterparts; the bulk oxide trap density .. decreases with the distance . from the Si/SiO. interface, and the distributions ..(.) are different for different gate dielectrics;
Limpid
发表于 2025-3-26 10:09:08
Hristo IlchevLS growth is therefore proposed to produce single crystalline silicon (c-Si) film over an amorphous oxide layer, without crystalline seeding. It is demonstrated that VLS growth in the spatial confinement of a cavity produces nanometer-thick c-Si ribbons over a micron area scale with a well controlle
connoisseur
发表于 2025-3-26 13:15:40
Kattia Eliana Melgar Dionicio,Cesar Augusto Ravines Salazar,Anieval Peña-Rojas,Frans Carhuamaca Castis of scattering events in the channel shows that the fraction of ballistic electrons in the Ohmic contacts devices increases from 80 to 95% when reducing the gate length from 100 to 10 nm. Hence, the transport in the channel is likely to be strongly coherent, which is analyzed by means of quantum W
heterodox
发表于 2025-3-26 17:14:46
A. L. Araujo,F. T. Silva,A. Ribeiro,J. B. L. M. Campos,R. M. Pilão