比赛用背带 发表于 2025-3-28 16:28:42

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知道 发表于 2025-3-28 22:30:07

V. K. Kalevic,K. V. Kavokin,I. A. Merkuloving the first principles calculations. The structures of ZrO. (111)/Ni (111) interfaces with 1- and 3-layer Ni thicknesses are optimized, and the mechanical properties are investigated. For tensile deformation in direction, the Young’s moduli of the 1-layer Ni and 3-layer Ni M-C models are 139

FADE 发表于 2025-3-29 02:47:05

Y. Q. Li,J. H. Smeting the first principles calculations. The structures of ZrO. (111)/Ni (111) interfaces with 1- and 3-layer Ni thicknesses are optimized, and the mechanical properties are investigated. For tensile deformation in direction, the Young’s moduli of the 1-layer Ni and 3-layer Ni M-C models are 139

Substitution 发表于 2025-3-29 07:00:32

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路标 发表于 2025-3-29 11:08:12

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杂役 发表于 2025-3-29 12:59:29

Springer Series in Solid-State Scienceshttp://image.papertrans.cn/s/image/874362.jpg

中古 发表于 2025-3-29 16:42:29

https://doi.org/10.1007/978-3-540-78820-1Exciton; Hall effect; Semiconductor; Semiconductors; Spin; Spin Hall effect; basics; dynamics; electronics; e

就职 发表于 2025-3-29 19:58:02

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prediabetes 发表于 2025-3-30 00:20:35

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neolith 发表于 2025-3-30 04:52:00

Basics of Semiconductor and Spin Physics, is given. Section 1.2 describes various spin interactions. Section 1.3 is a mini textbook on semiconductor physics designed for beginners. A short overview of spin phenomena in semiconductors is given in Sect. 1.4. Finally, Sect. 1.5 presents the topics discussed in the chapters to follow.
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查看完整版本: Titlebook: Spin Physics in Semiconductors; Michel I. Dyakonov Book 20081st edition Springer-Verlag Berlin Heidelberg 2008 Exciton.Hall effect.Semicon